Characteristics of 4H–SiC MOS interface annealed in N2O

• Published in: Solid-state electronics Vol. 49; no. 6; pp. 896 - 901
• Main Authors: Fujihira, Keiko, Tarui, Yoichiro, Imaizumi, Masayuki, Ohtsuka, Ken-ichi, Takami, Tetsuya, Shiramizu, Tatsuya, Kawase, Kazumasa, Tanimura, Jyunji, Ozeki, Tatsuo
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01.06.2005; Elsevier Science
• Subjects: Applied sciences; Channel mobility; Compound structure devices; Electronics; Exact sciences and technology; Interface state density; MOSFET; Nitridation; Oxidation; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon carbide; Transistors; Channel mobility; MOSFET; Oxidation; Silicon carbide; Interface state density; Nitridation; Voltage threshold; Interface state; Density of states; Annealing; Charge carrier mobility; Temperature effect; MOS structure; n channel; Nitriding; Controlled atmosphere; n type semiconductor; Voltage capacity curve; Planar technology

4H–SiC(0001) MOSFET annealed in N2O at below 1150°C is systematically investigated. Inversion-type planar MOSFETs show higher channel mobility and lower threshold voltage by increasing anneal temperature. Through C–V measurement of n-type MOS capacitors, the interface state density is revealed to de...