Characteristics of 4H–SiC MOS interface annealed in N2O
4H–SiC(0001) MOSFET annealed in N2O at below 1150°C is systematically investigated. Inversion-type planar MOSFETs show higher channel mobility and lower threshold voltage by increasing anneal temperature. Through C–V measurement of n-type MOS capacitors, the interface state density is revealed to de...
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Published in | Solid-state electronics Vol. 49; no. 6; pp. 896 - 901 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Oxford
Elsevier Ltd
01.06.2005
Elsevier Science |
Subjects | |
Online Access | Get full text |
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Summary: | 4H–SiC(0001) MOSFET annealed in N2O at below 1150°C is systematically investigated. Inversion-type planar MOSFETs show higher channel mobility and lower threshold voltage by increasing anneal temperature. Through C–V measurement of n-type MOS capacitors, the interface state density is revealed to decrease at higher anneal temperature. The field effect mobility of 30cm2/Vs is achieved by 1150°C anneal for 3h, which is about 10 times higher than that of not annealed MOSFET. Epitaxial n-channel MOSFET annealed in N2O has been also fabricated. A positive threshold voltage of 0.46V and the field effect mobility of 45cm2/Vs are attained. The effective mobility at 2.5MV/cm is 34cm2/Vs, which is five times higher than that for not annealed sample, suggesting that the N2O anneal improves the MOS interface quality. |
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ISSN: | 0038-1101 1879-2405 |
DOI: | 10.1016/j.sse.2004.10.016 |