Large-area uniform electron doping of graphene by Ag nanofilm

• Published in: AIP advances Vol. 7; no. 4; pp. 045209 - 045209-6
• Main Authors: Guo, Xiaopeng, Peng, Lilan, Tang, Libin, Xiang, Jinzhong, Ji, Rongbin, Zhang, Kai, Luk, Chi Man, Lai, Sin Ki, Wan, Ruimin, Duan, Yu, Lau, Shu Ping
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 01.04.2017; AIP Publishing LLC
• Subjects: Doping; Electrons; Graphene; Mechanical properties; Optical properties; Optoelectronic devices; Phototransistors; Photovoltaic cells; Raman spectroscopy; Roughness; Solar cells; Spectroellipsometry
• ISSN: 2158-3226; 2158-3226
• DOI: 10.1063/1.4979113

Graphene has attracted much attention at various research fields due to its unique optical, electronic and mechanical properties. Up to now, graphene has not been widely used in optoelectronic fields due to the lack of large-area uniform doped graphene (n-doped and p-doped) with smooth surface. Therefore, it is rather desired to develop some effective doping methods to extend graphene to optoelectronics. Here we developed a novel doping method to prepare large-area (> centimeter scale) uniform doped graphene film with a nanoscale roughness(RMS roughness ∼1.4 nm), the method (nano-metal film doping method) is simple but effective. Using this method electron doping (electron-injection) may be easily realized by the simple thermal deposition of Ag nano-film on a transferred CVD graphene. The doping effectiveness has been proved by Raman spectroscopy and spectroscopic ellipsometry. Importantly, our method sheds light on some potential applications of graphene in optoelectronic devices such as photodetectors, LEDs, phototransistors, solar cells, lasers etc.