Width Dependence of Inherent TM-Mode Lateral Leakage Loss in Silicon-On-Insulator Ridge Waveguides
We report the first experimental observation in the optical domain of a dramatic width-dependent lateral leakage loss behavior for the TM-like mode of tight vertical confinement ridge waveguides formed in silicon-on-insulator. The lateral leakage loss displays a series of sharp cyclic minima at prec...
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Published in | IEEE photonics technology letters Vol. 19; no. 6; pp. 429 - 431 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
15.03.2007
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | We report the first experimental observation in the optical domain of a dramatic width-dependent lateral leakage loss behavior for the TM-like mode of tight vertical confinement ridge waveguides formed in silicon-on-insulator. The lateral leakage loss displays a series of sharp cyclic minima at precise waveguide widths, and appears to be inherent to waveguide geometries of central importance to a wide variety of active devices in silicon photonics requiring lateral electrical access. This behavior is not predicted by the often-used effective-index-based methods, but is understood phenomenologically and also compared to prior numerical analysis and predictions of leaky mode behavior. It is shown that TM-like mode operation, critical to the operation of some active component designs, will require precision control of waveguide dimensions to achieve high performance |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 ObjectType-Article-2 ObjectType-Feature-1 |
ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/LPT.2007.891979 |