Study on reactive sputtering to deposit transparent conductive amorphous In2O3–ZnO films using an In–Zn alloy target

• Published in: Thin solid films Vol. 559; pp. 49 - 52
• Main Authors: Tsukamoto, Naoki, Sensui, Sakae, Jia, Junjun, Oka, Nobuto, Shigesato, Yuzo
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 30.05.2014; Elsevier
• Subjects: Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Energetic negative ions; Exact sciences and technology; In-situ analysis; In2O3–ZnO (IZO); Ion and electron beam-assisted deposition; ion plating; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Physics of gases, plasmas and electric discharges; Physics of plasmas and electric discharges; Plasma applications; Plasma-based ion implantation and deposition; Positive ions; Reactive sputtering; Transparent conducting oxide; In2O3–ZnO (IZO); In-situ analysis; Reactive sputtering; Positive ions; Transparent conducting oxide; Energetic negative ions; Amorphous thin film; Charge exchange; ZnO (IZO); In; Indium oxide; V shape; O; Thin films; Feedback; High energy; Physical vapor deposition; Zinc oxide; Sputter deposition; Plasma deposition
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2013.10.109

Amorphous indium–zinc-oxide films were deposited in the “transition region” by reactive sputtering using an In–Zn alloy target with a specially designed double feedback system. The cathode voltage showed a V- and circle-shaped curve as a function of O2 gas flow in the transition region, which differs from the S-shaped curve in Berg's model for reactive sputtering depositions. In-situ analyses with a quadrupole mass spectrometer combined with an energy analyzer revealed that the negative ions O−, O2−, InO−, and InO2−, with high kinetic energies corresponding to the cathode voltage, were generated at the partially oxidized target surface. Furthermore the positive ions O+, Ar+, In+, and Zn+ with rather low kinetic energies (around 10eV) were confirmed to be generated by the charge exchange of sputtered neutral O, Ar, In and Zn atoms, respectively. •In–Zn oxide films were deposited by reactive sputtering using an In–Zn alloy target.•The reactive sputtering process was controlled in the “transition region”.•The cathode voltage as a function of O2 flow showed V- and circle-shaped curve.•In-situ analyses on the energetic ions were carried out during the reactive sputtering.