Long wavelength vertical-cavity semiconductor optical amplifiers
This paper overviews the properties and possible applications of long wavelength vertical-cavity semiconductor optical amplifiers (VCSOAs). A VCSOA operating in the 1.3-/spl mu/m wavelength region is presented. The device was fabricated using wafer bonding; it was optically pumped and operated in re...
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Published in | IEEE journal of quantum electronics Vol. 37; no. 2; pp. 274 - 281 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.02.2001
Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | This paper overviews the properties and possible applications of long wavelength vertical-cavity semiconductor optical amplifiers (VCSOAs). A VCSOA operating in the 1.3-/spl mu/m wavelength region is presented. The device was fabricated using wafer bonding; it was optically pumped and operated in reflection mode. The reflectivity of the VCSOA top mirror was varied in the characterization of the device. Results are presented for 13 and 12 top mirror periods. By reducing the top mirror reflectivity, the amplifier gain, optical bandwidth, and saturation output power were simultaneously improved. For the case of 12 top mirror periods, rye demonstrate 13-dB fiber-to-fiber gain, 0.6 nm (100 GHz) optical bandwidth, a saturation output power of -3.5 dBm and a noise figure of 8.3 dB. The switching properties of the VCSOA are also briefly investigated. By modulating the pump laser, we have obtained a 46-dB extinction ratio in the output power, with the maximum output power corresponding to 7-dB fiber-to-fiber gain. All results are for continuous wave operation at room temperature. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9197 1558-1713 |
DOI: | 10.1109/3.903078 |