Calculation of the parameters for the Fano resonance in the impurity photocurrent spectrum of semiconductors doped with hydrogen-like donors

The paper presents the theoretical investigation of the Fano resonance in the spectra of impurity photocurrent for bulk semiconductors doped with donors. Calculation is made for the parameters describing the Fano resonance. These parameters can be evaluated with the use of two general dimensionless...

Full description

Saved in:
Bibliographic Details
Published inSemiconductor science and technology Vol. 25; no. 8; p. 085005
Main Authors Aleshkin, V Ya, Burdeiny, D I, Gavrilenko, L V
Format Journal Article
LanguageEnglish
Russian
Published Bristol IOP Publishing 01.08.2010
Institute of Physics
Subjects
Charging
Impurities
Mathematical analysis
Mathematical models
Photocurrent
Photoelectric effect
Semiconductors
Spectra
Online AccessGet full text

Cover

More Information
Summary:The paper presents the theoretical investigation of the Fano resonance in the spectra of impurity photocurrent for bulk semiconductors doped with donors. Calculation is made for the parameters describing the Fano resonance. These parameters can be evaluated with the use of two general dimensionless functions that are calculated numerically. Two kinds of donor impurity are considered: a hydrogen-like charged center and an impurity influenced by the central cell potential.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/25/8/085005