Strong optical injection-locked semiconductor lasers demonstrating > 100-GHz resonance frequencies and 80-GHz intrinsic bandwidths

By using strong optical injection locking, we report resonance frequency enhancement in excess of 100 GHz in semiconductor lasers. We demonstrate this enhancement in both distributed feedback (DFB) lasers and vertical-cavity surface-emitting lasers (VCSELs), showing the broad applicability of the te...

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Bibliographic Details
Published inOptics express Vol. 16; no. 9; pp. 6609 - 6618
Main Authors Lau, Erwin K, Zhao, Xiaoxue, Sung, Hyuk-Kee, Parekh, Devang, Chang-Hasnain, Connie, Wu, Ming C
Format Journal Article
LanguageEnglish
Published United States 28.04.2008
Subjects
Lasers, Semiconductor
Optics and Photonics
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Summary:By using strong optical injection locking, we report resonance frequency enhancement in excess of 100 GHz in semiconductor lasers. We demonstrate this enhancement in both distributed feedback (DFB) lasers and vertical-cavity surface-emitting lasers (VCSELs), showing the broad applicability of the technique and that the coupling Q is the figure-of-merit for resonance frequency enhancement. We have also identified the key factors that cause low-frequency roll-off in injection-locked lasers. By increasing the slave laser's DC current bias, we have achieved a record intrinsic 3-dB bandwidth of 80 GHz in VCSELs.
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ISSN:1094-4087
1094-4087
DOI:10.1364/oe.16.006609