Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells
In this work, controlled band gap modifications in InGaAsP/InGaAs and AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. Photoluminescence spectroscopy was used for monitoring the changes in the optical properties of the quantum wells due to interd...
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| Published in | Semiconductor science and technology Vol. 25; no. 5; p. 055014 |
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| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
| Published |
Bristol
IOP Publishing
01.05.2010
Institute of Physics |
| Subjects | |
| Online Access | Get full text |
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| Abstract | In this work, controlled band gap modifications in InGaAsP/InGaAs and AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. Photoluminescence spectroscopy was used for monitoring the changes in the optical properties of the quantum wells due to interdiffusion. X-ray photoelectron spectroscopy was used to investigate the interfacial reaction between the QW structure and dielectric capping layer. The results are compared and discussed based on the sublattices' interdiffusion, promotion or suppression under different dielectric capping layers. |
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| AbstractList | In this work, controlled band gap modifications in InGaAsP/InGaAs and AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. Photoluminescence spectroscopy was used for monitoring the changes in the optical properties of the quantum wells due to interdiffusion. X-ray photoelectron spectroscopy was used to investigate the interfacial reaction between the QW structure and dielectric capping layer. The results are compared and discussed based on the sublattices' interdiffusion, promotion or suppression under different dielectric capping layers. |
| Author | Fu, L Du, S C Tan, H H Jagadish, C |
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| Keywords | Gallium Indium Arsenides phosphides Mixed Energy gap Gallium Indium Arsenides Mixed Annealing Vacancies Quantum wells Photoluminescence Interdiffusion Interface reaction X-ray photoelectron spectra |
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| References | 22 23 24 25 27 Gareso P L (21) 2006; 21 10 11 12 13 14 Chamberlin D R (26) 2002; 719 15 16 17 18 19 Lee A S W (20) 2000; 15 1 2 3 4 5 6 7 8 9 |
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| SubjectTerms | Capping Chemical interdiffusion; diffusion barriers Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Dielectrics Diffusion in solids Exact sciences and technology Indium gallium arsenides Interdiffusion Interface reactions Monitoring Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Physics Quantum wells Semiconductors Transport properties of condensed matter (nonelectronic) |
| Title | Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells |
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