Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells

• Published in: Semiconductor science and technology Vol. 25; no. 5; p. 055014
• Main Authors: Du, S C, Fu, L, Tan, H H, Jagadish, C
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 01.05.2010; Institute of Physics
• Subjects: Capping; Chemical interdiffusion; diffusion barriers; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Dielectrics; Diffusion in solids; Exact sciences and technology; Indium gallium arsenides; Interdiffusion; Interface reactions; Monitoring; Optical properties; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Physics; Quantum wells; Semiconductors; Transport properties of condensed matter (nonelectronic); Gallium Indium Arsenides phosphides Mixed; Energy gap; Gallium Indium Arsenides Mixed; Annealing; Vacancies; Quantum wells; Photoluminescence; Interdiffusion; Interface reaction; X-ray photoelectron spectra
• ISSN: 0268-1242; 1361-6641
• DOI: 10.1088/0268-1242/25/5/055014

In this work, controlled band gap modifications in InGaAsP/InGaAs and AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. Photoluminescence spectroscopy was used for monitoring the changes in the optical properties of the quantum wells due to interdiffusion. X-ray photoelectron spectroscopy was used to investigate the interfacial reaction between the QW structure and dielectric capping layer. The results are compared and discussed based on the sublattices' interdiffusion, promotion or suppression under different dielectric capping layers.