Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors

• Published in: Journal of applied physics Vol. 123; no. 16
• Main Authors: Omura, Yasuhisa, Mori, Yoshiaki, Sato, Shingo, Mallik, Abhijit
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 28.04.2018
• Subjects: Applied physics; Current voltage characteristics; Density; Field effect transistors; Leakage current; Semiconductor devices

This paper discusses the role of trap-assisted-tunneling process in controlling the ON- and OFF-state current levels and its impacts on the current-voltage characteristics of a tunnel field-effect transistor. Significant impacts of high-density traps in the source region are observed that are discus...