Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors

This paper discusses the role of trap-assisted-tunneling process in controlling the ON- and OFF-state current levels and its impacts on the current-voltage characteristics of a tunnel field-effect transistor. Significant impacts of high-density traps in the source region are observed that are discus...

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Bibliographic Details
Published inJournal of applied physics Vol. 123; no. 16
Main Authors Omura, Yasuhisa, Mori, Yoshiaki, Sato, Shingo, Mallik, Abhijit
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 28.04.2018
Subjects
Applied physics
Current voltage characteristics
Density
Field effect transistors
Leakage current
Semiconductor devices
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Summary:This paper discusses the role of trap-assisted-tunneling process in controlling the ON- and OFF-state current levels and its impacts on the current-voltage characteristics of a tunnel field-effect transistor. Significant impacts of high-density traps in the source region are observed that are discussed in detail. With regard to recent studies on isoelectronic traps, it has been discovered that deep level density must be minimized to suppress the OFF-state leakage current, as is well known, whereas shallow levels can be utilized to control the ON-state current level. A possible mechanism is discussed based on simulation results.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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content type line 14
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5010036