Review of ultrafast spectroscopy studies of valley carrier dynamics in two-dimensional semiconducting transition metal dichalcogenides
The two-dimensional layered transition metal dichalcogenides provide new opportunities in future valley-based in- formation processing and also provide an ideal platform to study excitonic effects. At the center of various device physics toward their possible electronic and optoelectronic applicatio...
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| Published in | Chinese physics B Vol. 26; no. 3; pp. 148 - 159 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.03.2017
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| Online Access | Get full text |
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| Summary: | The two-dimensional layered transition metal dichalcogenides provide new opportunities in future valley-based in- formation processing and also provide an ideal platform to study excitonic effects. At the center of various device physics toward their possible electronic and optoelectronic applications is understanding the dynamical evolution of various many- particle electronic states, especially exciton which dominates the optoelectronic response of TMDs, under the novel con- text of valley degree of freedom. Here, we provide a brief review of experimental advances in using helicity-resolved ultrafast spectroscopy, especially ultrafast pump-probe spectroscopy, to study the dynamical evolution of valley-related many-particle electronic states in semiconducting monolayer transitional metal dichalcogenides. |
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| Bibliography: | ultrafast spectroscopy, valley carrier dynamics, transition metal dichalcogenides, exciton Dong Sun1,2, Jia-Wei Lai1, Jun-Chao Ma1, Qin-Sheng Wang1, and Jing Liu 3（ 1 International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China 2Collaborative Innovation Center of Quantum Matter, Beijing 100871, China 3 State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Optoelectronic Engineering Tianjin University, Tianjin 300072, China） The two-dimensional layered transition metal dichalcogenides provide new opportunities in future valley-based in- formation processing and also provide an ideal platform to study excitonic effects. At the center of various device physics toward their possible electronic and optoelectronic applications is understanding the dynamical evolution of various many- particle electronic states, especially exciton which dominates the optoelectronic response of TMDs, under the novel con- text of valley degree of freedom. Here, we provide a brief review of experimental advances in using helicity-resolved ultrafast spectroscopy, especially ultrafast pump-probe spectroscopy, to study the dynamical evolution of valley-related many-particle electronic states in semiconducting monolayer transitional metal dichalcogenides. 11-5639/O4 |
| ISSN: | 1674-1056 2058-3834 |
| DOI: | 10.1088/1674-1056/26/3/037801 |