Investigation of InGaAsP-based solar cells for double-junction photovoltaic devices

• Published in: Thin solid films Vol. 516; no. 20; pp. 6744 - 6747
• Main Authors: Emziane, M., Nicholas, R.J., Rogers, D.C., Dosanjh, J.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 30.08.2008; Elsevier Science
• Subjects: Applied sciences; Assessment; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Design; Energy; Exact sciences and technology; Fabrication; InGaAsP; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Natural energy; Other semiconductors; Photovoltaic conversion; Physics; Solar cells; Solar cells. Photoelectrochemical cells; Solar energy; Specific materials; Vapor phase epitaxy; growth from vapor phase; Solar cells; Design; Fabrication; 78.66.Fd; Assessment; 71.20.Nr; 84.60.Jt; InGaAsP; Gallium arsenides; Voltage current curve; Diode; Thermophotovoltaic cells; Doping; VPE; Gallium Arsenides phosphides; Implementation; Indium phosphide; Photovoltaic cell; Energy gap; Energetic efficiency; Energy conversion; 84.60.Jt InGaAsP; Theoretical study; Layer thickness; Indium Arsenides phosphides; Indium arsenides; III-V compound; Solar cell; MOVPE method; III-V semiconductors
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2007.12.094

This paper deals with the design, implementation and assessment of single-junction solar cells using the quaternary semiconductor material InGaAsP. Two bandgaps of 1.0 and 1.2eV were considered in n/p and p/n structure configurations lattice-matched to InP. These solar cells are being investigated for their subsequent integration, together with single-junction 0.74eV bandgap InGaAs thermophotovoltaic (TPV) cells, as double-junction three-terminal photovoltaic (PV) devices. The devices were grown using MOVPE on InP substrates, with layer thicknesses and doping concentrations optimised through prior modelling. The assessment of the cells was undertaken using current–voltage measurements with a calibrated TPV simulator on mesa diodes of different sizes. Open-circuit voltages of up to 695 and 655mV, and fill factors of 0.48 and 0.6 were measured for 1.2 and 1.0eV solar cells, respectively. The best energy conversion efficiency recorded was 7% on a 1.0eV bandgap n/p device. These cells were further investigated using spectral response measurements and the results are presented, compared and discussed.