Very low-temperature epitaxial growth of silicon and germanium using plasma-assisted CVD

• Published in: Thin solid films Vol. 517; no. 1; pp. 10 - 13
• Main Authors: Sakuraba, Masao, Muto, Daisuke, Mori, Masaki, Sugawara, Katsutoshi, Murota, Junichi
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 03.11.2008; Elsevier
• Subjects: Atomic layer doping; Chemical vapor deposition (CVD); Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Electron-cyclotron resonance (ECR) plasma; Epitaxial growth; Exact sciences and technology; Heterostructure; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Strain; Theory and models of film growth; Heterostructure; Si; Atomic layer doping; Chemical vapor deposition (CVD); Electron-cyclotron resonance (ECR) plasma; Epitaxial growth; Ge; Strain; Epitaxial layers; Electron cyclotron-resonance; Epitaxy; Doping; Very low temperature; Heat treatments; CVD; Growth mechanism; Germanium; Silicon; PECVD; Measurement accuracy; Heterostructures
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2008.08.028

By electron-cyclotron resonance Ar plasma enhanced chemical-vapor deposition, Si and Ge epitaxial growth on Si(100) were achieved without substrate heating using SiH 4 and GeH 4, respectively, and formation of highly strained nanometer-order heterostructures of Si and Ge was demonstrated. Moreover, on atomic-order nitrided Si(100), Si epitaxial growth without substrate heating was also achieved, and it was confirmed that N atoms of about 0.8 atomic layer are confined within about a 3 nm-thick region under present measurement accuracy. These results open the way to realization of highly strained nanometer-order heterostructures with local doping control.