Performance of packaged near-traveling-wave semiconductor laser amplifier with multilongitudinal mode input

• Published in: Journal of lightwave technology Vol. 7; no. 1; pp. 163 - 170
• Main Authors: Evankow, J.D., Olsson, N.A., Ku, R.T.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.01.1989; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Circuit properties; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Fiber lasers; Indium phosphide; Laser modes; Miscellaneous; Optical amplifiers; Optical and optoelectronic circuits; Pulse amplifiers; Resonance; Semiconductor device packaging; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission; Optical amplifier; Semiconductor laser
• ISSN: 0733-8724; 1558-2213
• DOI: 10.1109/50.17749

The results for a packaged 1.30- mu m InP/InGaAsP optical amplifier used to switch broadband multilongitudinal modes signals are presented. Despite the absence of optical isolators and even with the introduction of additional external reflections (R approximately=1.0%), the optical fiber-to-fiber gain is stable over a large temperature range at resonance (Delta G<or=0.35 dB Delta T=+or-0.75 degrees C at G=5.76 dB). Although the amplifier is capable of higher levels of gain (G/sub max/ approximately=13 dB), it is considered that stable gain, relative to variations in temperature and reflectivity is more critical to the overall system. It has been found that a multilongitudinal mode signal can be amplified by a resonant amplifier without system degradation caused by mode-partition noise, and that junction heating requires a thermal stabilization period up to approximately=0.2 ms after the start of a current pulse.