Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs

• Published in: Solid-state electronics Vol. 53; no. 2; pp. 150 - 153
• Main Authors: Na, K.-I., Cristoloveanu, S., Bae, Y.-H., Patruno, P., Xiong, W., Lee, J.-H.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.02.2009; Elsevier
• Subjects: Applied sciences; Back-gate bias; Condensed Matter; Coupling effect; Delay; Depletion; Drains; Electric potential; Electronics; Exact sciences and technology; Fins; Gate-induced floating-body effect (GIFBE); Gates; Other; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon-on-insulator (SOI); Transistors; Triple-gate MOSFET; Voltage; Silicon-on-insulator (SOI); Gate-induced floating-body effect (GIFBE); Triple-gate MOSFET; Back-gate bias; Coupling effect; Gate current; MOSFET; Tunnel effect; Silicon on insulator technology; Field effect transistor; Drain voltage; Leakage current; Delay time; Floating body; Transconductance
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2008.10.016

The gate-induced floating-body effect GIFBE) in triple-gate FETs is systematically investigated as a function of fin width and back-gate bias. GIFBE is due to body charging by the gate tunneling current and gives rise to a second peak in the transconductance. It occurs even in fully depleted (FD) devices, when the back-gate is driven from depletion to accumulation. It is found that the front-gate still maintains FD characteristics even though the GIFBE appears. GIFBE strongly decreases in narrow fins where the fringing field between the lateral gates prevents the back interface to reach accumulation. We show that GIFBE also depends on delay time and drain voltage.