Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties
β-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of β-Ga2O3 devices at various temperatures is important for improving device performance and reliability. In this study, we fabricated a Pt/β-Ga2O3 Schottky barrier d...
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Published in | AIP advances Vol. 8; no. 1; pp. 015316 - 015316-9 |
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Main Authors | , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Melville
American Institute of Physics
01.01.2018
AIP Publishing LLC |
Subjects | |
Online Access | Get full text |
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Summary: | β-Ga2O3 is an ultra-wide bandgap semiconductor
with applications in power electronic devices. Revealing the transport characteristics of
β-Ga2O3 devices at various temperatures is
important for improving device performance and reliability. In this study, we fabricated a
Pt/β-Ga2O3 Schottky barrier diode with good
performance characteristics, such as a low ON-resistance, high forward current, and a
large rectification ratio. Its temperature-dependent current–voltage and
capacitance–voltage characteristics were measured at various temperatures. The
characteristic diode parameters were derived using thermionic emission theory. The
ideality factor n was found to decrease from 2.57 to 1.16 while the
zero-bias barrier height Φb0 increased from 0.47 V to 1.00 V when the
temperature was increased from 125 K to 350 K. This was explained by the Gaussian
distribution of barrier height inhomogeneity. The mean barrier height
Φ
¯
b0 = 1.27 V and zero-bias standard deviation
σ0 = 0.13 V were obtained. A modified Richardson plot gave a
Richardson constant A* of 36.02
A·cm−2·K−2, which is close to the theoretical value of 41.11
A·cm−2·K−2. The differences between the barrier heights determined
using the capacitance–voltage and current–voltage curves were also in line with the
Gaussian distribution of barrier height inhomogeneity. |
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ISSN: | 2158-3226 2158-3226 |
DOI: | 10.1063/1.5007197 |