A possible high-mobility signal in bulk MoTe2: Temperature independent weak phonon decay
Layered transition metal dichalcogenides (TMDs) have attracted great attention due to their non-zero bandgap for potential application in high carrier mobility devices. Recent studies demonstrate that the carrier mobility of MoTe2 would decrease by orders of magnitude when used for few-layer transis...
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Published in | AIP advances Vol. 6; no. 11; pp. 115207 - 115207-5 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Melville
American Institute of Physics
01.11.2016
AIP Publishing LLC |
Subjects | |
Online Access | Get full text |
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Summary: | Layered transition metal dichalcogenides (TMDs) have attracted great attention due to their non-zero bandgap for potential application in high carrier mobility devices. Recent studies demonstrate that the carrier mobility of MoTe2 would decrease by orders of magnitude when used for few-layer transistors. As phonon scattering has a significant influence on carrier mobility of layered material, here, we first reported temperature-dependent Raman spectra of bulk 2H-MoTe2 from 80 to 300 K and discovered that the phonon lifetime of both E1
2g and A1g vibration modes are independent with temperature. These results were explained by the weak phonon decay in MoTe2. Our results imply the existence of a carrier mobility higher than the theoretical value in intrinsic bulk 2H-MoTe2 and the feasibility to obtain MoTe2-based transistors with sufficiently high carrier mobility. |
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ISSN: | 2158-3226 2158-3226 |
DOI: | 10.1063/1.4967351 |