A possible high-mobility signal in bulk MoTe2: Temperature independent weak phonon decay

Layered transition metal dichalcogenides (TMDs) have attracted great attention due to their non-zero bandgap for potential application in high carrier mobility devices. Recent studies demonstrate that the carrier mobility of MoTe2 would decrease by orders of magnitude when used for few-layer transis...

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Bibliographic Details
Published inAIP advances Vol. 6; no. 11; pp. 115207 - 115207-5
Main Authors Li, Titao, Zhang, Zhaojun, Zheng, Wei, Lv, Yangyang, Huang, Feng
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.11.2016
AIP Publishing LLC
Subjects
Carrier mobility
Crystallization
Decay
Molybdenum compounds
Raman spectra
Semiconductor devices
Tellurides
Temperature dependence
Transistors
Transition metal compounds
Vibration mode
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Summary:Layered transition metal dichalcogenides (TMDs) have attracted great attention due to their non-zero bandgap for potential application in high carrier mobility devices. Recent studies demonstrate that the carrier mobility of MoTe2 would decrease by orders of magnitude when used for few-layer transistors. As phonon scattering has a significant influence on carrier mobility of layered material, here, we first reported temperature-dependent Raman spectra of bulk 2H-MoTe2 from 80 to 300 K and discovered that the phonon lifetime of both E1 2g and A1g vibration modes are independent with temperature. These results were explained by the weak phonon decay in MoTe2. Our results imply the existence of a carrier mobility higher than the theoretical value in intrinsic bulk 2H-MoTe2 and the feasibility to obtain MoTe2-based transistors with sufficiently high carrier mobility.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4967351