Electrical characterizations of solution-processed dielectric layer of octamethylcyclotetrasiloxane

• Published in: Microelectronic engineering Vol. 118; pp. 6 - 10
• Main Authors: Jung, Hunsang, Kim, Minkeun, Kim, Yejin, Oh, Sewook, Kang, Chi-Jung, Yoon, Tae-Sik, Lee, Hyun Ho
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 25.04.2014; Elsevier
• Subjects: Annealing; Applied sciences; Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Corrosion; Corrosion mechanisms; Cross-disciplinary physics: materials science; rheology; Dielectric constant; Dielectric properties of solids and liquids; Dielectric, amorphous and glass solid devices; Dielectrics; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electronics; Exact sciences and technology; Materials science; Metals. Metallurgy; MIS capacitor; Octamethylcyclotetrasiloxane; Oxidation; Ozone; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductors; Solution process; TFTs; Thin film transistors; Treatment of materials and its effects on microstructure and properties; X-ray photoelectron spectroscopy; ZTO; MIS capacitor; ZTO; Octamethylcyclotetrasiloxane; TFTs; Solution process; Insulator; Annealing temperature; Tin oxide; Printed electronics; Zinc oxide; Oxidation; Silicon; Fourier-transformed infrared spectrometry; Thermal annealing; Hysteresis; Growth from solution; Voltage capacity curve; Electrical characteristic; Semiconductor materials; Dielectric properties; Ozone; Ultraviolet radiation; High k dielectric; Thin film transistor; X-ray photoelectron spectra
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2014.01.004

[Display omitted] •Octamethylcyclotetrasiloxane was introduced for a solution processed dielectric layer.•Dielectric property with OMTS was examined in metal–insulator–silicon structure.•Soluble zinc-tin-oxide semiconductor precursor was successfully applied on OMTS-based dielectric. Solution processed dielectric layer was fabricated with octamethylcyclotetrasiloxane (OMTS) by UV/ozone oxidation and thermal annealing. Annealing temperatures of 100°C, 300°C, and 500°C were examined and their dielectric properties were characterized on structures of metal–insulator–silicon (MIS) capacitor and thin film transistor (TFT) with solution-processed zinc-tin-oxide (ZTO) semiconductor. Chemical changes from the UV/ozone oxidation and annealing were analyzed by FTIR and XPS. For the 500°C annealed dielectric layer with UV/ozone oxidation, no hysteresis in capacitance–voltage (C–V) measurement was detected having a high dielectric constant (k) of 5.52. The OMTS film can be applicable as a gate dielectric layer towards intensive development of printed electronics.