High-efficiency InGaN/GaN quantum well structures on large area silicon substrates

• Published in: Physica status solidi. A, Applications and materials science Vol. 209; no. 1; pp. 13 - 16
• Main Authors: Zhu, D., McAleese, C., Häberlen, M., Kappers, M. J., Hylton, N., Dawson, P., Radtke, G., Couillard, M., Botton, G. A., Sahonta, S.-L., Humphreys, C. J.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.01.2012; WILEY‐VCH Verlag
• Subjects: electron microscopy; GaN; InGaN; LEDs; MOVPE; silicon
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.201100129

The growth techniques which have enabled the realization of InGaN‐based multi‐quantum‐well (MQW) structures with high internal quantum efficiencies (IQE) on 150 mm (6‐in.) silicon substrates are reviewed. InGaN/GaN MQWs are deposited onto GaN templates on large‐area (111) silicon substrates, using AlGaN strain‐mediating interlayers to inhibit thermal‐induced cracking and wafer‐bowing, and using a SiNx interlayer to reduce threading dislocation densities in the active region of the MQW structure. MQWs with high IQE approaching 60% have been demonstrated. Atomic resolution electron microscopy and EELS analysis have been used to study the nature of the important interface between the Si(111) substrate and the AlN nucleation layer. We demonstrate an amorphous SiNx interlayer at the interface about 2 nm wide, which does not, however, prevent good epitaxy of the AlN on the Si(111) substrate.