Electrical and optical properties of W-doped ZnO films grownon (11\bar{2}0) sapphire substrates using pulsed laser deposition

• Published in: Journal of the Ceramic Society of Japan Vol. 122; no. 1430; pp. 908 - 913
• Main Authors: ADACHI, Yutaka, SAITO, Noriko, HASHIGUCHI, Minako, SAKAGUCHI, Isao, SUZUKI, Taku, OHASHI, Naoki, HISHITA, Shunichi
• Format: Journal Article
• Language: English; Japanese
• Published: The Ceramic Society of Japan 01.01.2014
• Subjects: Defect compensation; Hall measurement; Pulsed laser deposition; Sapphire substrate; Tungsten doping; Zinc oxide
• ISSN: 1882-0743; 1348-6535
• DOI: 10.2109/jcersj2.122.908

WxZn1−xO films with various doping concentration were prepared using pulsed laser deposition (PLD) on the (11 2 0) face of sapphire. The c-axis-oriented WxZn1−xO films were grown without in-plane rotation domains when the W content in the films was below 3.6 at.%. The films exhibit a high transmittance of approximately 80% in the visible-near infrared region regardless of the W content, and no shift of the absorption edge was observed. From the results of Hall measurements, it was revealed that the doping efficiency of W in the films was <0.15 electrons/W. The electron mobility of the WxZn1−xO films was 14–35 cm2 V−1 s−1, which is relatively low compared with that of the undoped ZnO film grown using PLD. The low doping efficiency and electron mobility are considered to be attributed to the formation of defects resulting from the W-doping.