Improvement of (001)-oriented diamond p-i-n diode by use of selective grown n+ layer

• Published in: Physica status solidi. A, Applications and materials science Vol. 207; no. 9; pp. 2099 - 2104
• Main Authors: Kato, Hiromitsu, Makino, Toshiharu, Ogura, Masahiko, Tokuda, Norio, Oyama, Kazuhiro, Takeuchi, Daisuke, Okushi, Hideyo, Yamasaki, Satoshi
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.09.2010; WILEY‐VCH Verlag; Wiley-VCH
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; n-type contact; Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; p-i-n diode; phosphorus doping; Physics; selective growth; CV characteristic; Secondary ion mass spectra; Selective growth; Stacking sequence; Lithography; Surface morphology; Diamonds; Metallizing; p i n junctions; PECVD; Series resistance; IV characteristic
• ISSN: 1862-6300; 1862-6319
• DOI: 10.1002/pssa.201000148

The contact metallization to n‐type diamond is a key subject for realizing diamond bipolar devices. We have proposed the selective growth technique using the patterned surface morphology and 〈111〉 directional growth, and have achieved the heavily P doping even on (001) diamond. The objective of this research is to demonstrate the availability of this selective grown n+ diamond onto a stack junction diode in order to reduce the series resistance of n‐type layer. The p‐i‐n structure with and without n+ layer were fabricated on (001)‐oriented IIb substrate by plasma‐enhanced chemical vapor deposition (CVD) and conventional lithography technique, and their electrical properties are evaluated by current–voltage and capacitance–voltage measurements. Thanks to the selective grown n+ layer, good diode characters are obtained: (i) a decrease in threshold voltage and (ii) an increase in forward current without any degradation of reverse characteristics. The results clearly indicate that the selective growth technique is useful for fabricating the (001)‐oriented bipolar junction devices.