Efficient Synthesis of Heteroatom (N or S)-Doped Graphene Based on Ultrathin Graphene Oxide-Porous Silica Sheets for Oxygen Reduction Reactions

Heteroatom (N or S)‐doped graphene with high surface area is successfully synthesized via thermal reaction between graphene oxide and guest gases (NH3 or H2S) on the basis of ultrathin graphene oxide‐porous silica sheets at high temperatures. It is found that both N and S‐doping can occur at anneali...

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Published inAdvanced functional materials Vol. 22; no. 17; pp. 3634 - 3640
Main Authors Yang, Shubin, Zhi, Linjie, Tang, Kun, Feng, Xinliang, Maier, Joachim, Müllen, Klaus
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 11.09.2012
WILEY‐VCH Verlag
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Summary:Heteroatom (N or S)‐doped graphene with high surface area is successfully synthesized via thermal reaction between graphene oxide and guest gases (NH3 or H2S) on the basis of ultrathin graphene oxide‐porous silica sheets at high temperatures. It is found that both N and S‐doping can occur at annealing temperatures from 500 to 1000 °C to form the different binding configurations at the edges or on the planes of the graphene, such as pyridinic‐N, pyrrolic‐N, and graphitic‐N for N‐doped graphene, thiophene‐like S, and oxidized S for S‐doped graphene. Moreover, the resulting N and S‐doped graphene sheets exhibit good electrocatalytic activity, long durability, and high selectivity when they are employed as metal‐free catalysts for oxygen reduction reactions. This approach may provide an efficient platform for the synthesis of a series of heteroatom‐doped graphenes for different applications. Heteroatom (N or S)‐doped graphenes are synthesized via thermal reaction between graphene oxide and guest gases (NH3 or H2S) on ultrathin graphene oxide‐porous silica sheets at high temperatures. It is found that both N and S‐doping can occur to form the different binding configurations in the graphene and both N and S‐doped graphene sheets exhibit excellent electrocatalytic properties for oxygen reduction reaction.
Bibliography:istex:A18AFD8E015088E88160DE645033D3D242F6409F
ark:/67375/WNG-9RNDW0GV-L
ArticleID:ADFM201200186
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201200186