Band gap and effective electron mass of cubic InN

• Published in: Physica status solidi. C Vol. 5; no. 6; pp. 2342 - 2344
• Main Authors: Schley, P., Napierala, C., Goldhahn, R., Gobsch, G., Schörmann, J., As, D. J., Lischka, K., Feneberg, M., Thonke, K., Fuchs, F., Bechstedt, F.
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.05.2008; WILEY‐VCH Verlag
• Subjects: 71.20.Nr; 78.20.Ci; 78.30.Fs; 78.66.Fd; 81.15.Hi
• ISSN: 1862-6351; 1610-1642
• DOI: 10.1002/pssc.200778482

We succeeded in growing single crystalline c‐InN films on 3C‐SiC substrate with a c‐GaN buffer layer by MBE. Spectroscopic ellipsometry is applied in order to determine the complex dielectric function for cubic InN from mid‐infrared into the visible spectral region. The high electron densities above 1019 cm–3 cause pronounced Burstein‐Moss shifts at the gap. Taking into account the non‐parabolicity and the filling of the conduction band, data analysis yields renormalized band edges between 0.430 and 0.455 eV. Including carrier‐induced band‐gap renormalization we estimate a zero‐density band gap of ∼0.596eV for c‐InNwith a corresponding effective electron mass of 0.041m0 at the Γ point of the Brillouin zone. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)