Detonation Chemistry: A New Access to Nanocrystalline Gallium Nitride

One of the most promising materials for advanced optoelectronics and high power devices is gallium nitride (GaN). This potential, due to a unique combination of properties, makes a rational synthesis of nanosized GaN highly desirable. It has been found that gallium azides might offer a solution to t...

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Bibliographic Details
Published inAdvanced materials (Weinheim) Vol. 10; no. 12; pp. 961 - 964
Main Authors Frank, Alissa C., Fischer, Roland A.
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag GmbH 01.08.1998
WILEY‐VCH Verlag GmbH
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Summary:One of the most promising materials for advanced optoelectronics and high power devices is gallium nitride (GaN). This potential, due to a unique combination of properties, makes a rational synthesis of nanosized GaN highly desirable. It has been found that gallium azides might offer a solution to this problem, since GaN nanocrystallites in a size range from 2 nm to 3000 nm can be prepared by detonations of gallium azides, the detonation energy determining the size of the nanocrystallites. Thus, explosivity, a commonly unwanted property, opens up opportunities for nanochemistry.
Bibliography:ArticleID:ADMA961
istex:4345A098EC72017CA635AE93116AA595895235CD
ark:/67375/WNG-JTJHMF0G-9
ISSN:0935-9648
1521-4095
DOI:10.1002/(SICI)1521-4095(199808)10:12<961::AID-ADMA961>3.0.CO;2-O