Detonation Chemistry: A New Access to Nanocrystalline Gallium Nitride
One of the most promising materials for advanced optoelectronics and high power devices is gallium nitride (GaN). This potential, due to a unique combination of properties, makes a rational synthesis of nanosized GaN highly desirable. It has been found that gallium azides might offer a solution to t...
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Published in | Advanced materials (Weinheim) Vol. 10; no. 12; pp. 961 - 964 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Weinheim
WILEY-VCH Verlag GmbH
01.08.1998
WILEY‐VCH Verlag GmbH |
Online Access | Get full text |
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Summary: | One of the most promising materials for advanced optoelectronics and high power devices is gallium nitride (GaN). This potential, due to a unique combination of properties, makes a rational synthesis of nanosized GaN highly desirable. It has been found that gallium azides might offer a solution to this problem, since GaN nanocrystallites in a size range from 2 nm to 3000 nm can be prepared by detonations of gallium azides, the detonation energy determining the size of the nanocrystallites. Thus, explosivity, a commonly unwanted property, opens up opportunities for nanochemistry. |
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Bibliography: | ArticleID:ADMA961 istex:4345A098EC72017CA635AE93116AA595895235CD ark:/67375/WNG-JTJHMF0G-9 |
ISSN: | 0935-9648 1521-4095 |
DOI: | 10.1002/(SICI)1521-4095(199808)10:12<961::AID-ADMA961>3.0.CO;2-O |