High diffraction efficiency in crystals curved by surface damage
Diffraction profiles of curved Si and GaAs crystals obtained by a controlled damage process on one side of planar crystals have been investigated at X‐ray energies E = 17, 59 and 120 keV. At E = 17 and 59 keV in the condition of slight curvature, that is when the diffracting plane bending over the e...
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Published in | Journal of applied crystallography Vol. 46; no. 6; pp. 1576 - 1581 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
5 Abbey Square, Chester, Cheshire CH1 2HU, England
International Union of Crystallography
01.12.2013
Blackwell Publishing Ltd |
Subjects | |
Online Access | Get full text |
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Summary: | Diffraction profiles of curved Si and GaAs crystals obtained by a controlled damage process on one side of planar crystals have been investigated at X‐ray energies E = 17, 59 and 120 keV. At E = 17 and 59 keV in the condition of slight curvature, that is when the diffracting plane bending over the extinction length is lower than the Darwin width, the Laue diffraction profiles with lattice planes parallel or inclined with respect to the curvature radius R show an enhancement of integrated intensity proportional to 1/R, much larger than in the corresponding perfect bent crystals. At E = 120 keV, in the condition of strong curvature, the crystals behave as bent perfect crystals with integrated intensity corresponding to that of a mosaic crystal. These crystals are proposed as optical elements for focusing hard X‐ray beams. |
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Bibliography: | ark:/67375/WNG-KPGQ4K90-Q istex:8CAD6BCC2D5E63FFB9F3FC084474C05CE19A114A ArticleID:JCRTO5051 ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1600-5767 0021-8898 1600-5767 |
DOI: | 10.1107/S0021889813022954 |