Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

AlGaN/GaN heterostructure devices are capable of delivering high‐frequency power amplifiers and power switches with performances far superior than those offered by the mainstream silicon technology and other advanced semiconductor technologies. Primarily driven by applications' need, the last f...

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Bibliographic Details
Published inPhysica status solidi. A, Applications and materials science Vol. 208; no. 2; pp. 434 - 438
Main Authors Chen, Kevin J., Zhou, Chunhua
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.02.2011
WILEY‐VCH Verlag
Subjects
dry etching
enhancement-mode AlGaN/GaN HEMT
fluorine plasma ion implantation
smart power chip technology
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Summary:AlGaN/GaN heterostructure devices are capable of delivering high‐frequency power amplifiers and power switches with performances far superior than those offered by the mainstream silicon technology and other advanced semiconductor technologies. Primarily driven by applications' need, the last few years have witnessed major effort in the development of AlGaN/GaN enhancement‐mode (E‐mode) HEMTs and MIS‐HEMT. This paper attempts to review the latest progresses in this technology, including alternative approaches and device characteristics. Application examples of the E‐mode HEMT technology are also discussed.
Bibliography:istex:C3B70EB5CF4B940C5A1120C24610398042030E48
ArticleID:PSSA201000631
ark:/67375/WNG-NXCCWX8T-D
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201000631