The characteristics of thin film electroluminescent displays produced using sol–gel produced tantalum pentoxide and zinc sulfide

An inverted double insulating thin film electroluminescent display structure has been fabricated using all sol–gel methods. The active layer of ZnS:Mn has been produced by a sulfidation process following sol–gel deposition of ZnO:Mn. This layer is sandwiched between high-permittivity insulating tant...

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Bibliographic Details
Published inThin solid films Vol. 447; no. Complete; pp. 85 - 89
Main Authors Kavanagh, Y., Alam, M.J., Cameron, D.C.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 30.01.2004
Subjects
Electroluminescence
Sol–gel
Tantalum pentoxide
Zinc sulfide
Zinc sulfide
Tantalum pentoxide
Electroluminescence
Sol–gel
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Summary:An inverted double insulating thin film electroluminescent display structure has been fabricated using all sol–gel methods. The active layer of ZnS:Mn has been produced by a sulfidation process following sol–gel deposition of ZnO:Mn. This layer is sandwiched between high-permittivity insulating tantalum pentoxide (Ta 2O 5) layers. A silicon substrate served as the lower electrode and a top transparent electrode of ZnO:Al can be used. This paper reports on the structural and electronic properties of the Ta 2O 5 insulators and the influence of their crystal structure on the luminescent properties of the device.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2003.09.027