Properties of titanium nitride films prepared by direct current magnetron sputtering

• Published in: Materials science & engineering. A, Structural materials : properties, microstructure and processing Vol. 445; pp. 223 - 236
• Main Authors: Jeyachandran, Y.L., Narayandass, Sa.K., Mangalaraj, D., Areva, Sami, Mielczarski, J.A.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.02.2007; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; dc magnetron sputtering; Deposition by sputtering; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Low-field transport and mobility; piezoresistance; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Nitrogen concentration; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics; Properties; Thickness; Titanium nitride films; Thickness; Nitrogen concentration; dc magnetron sputtering; Properties; Titanium nitride films; Stoichiometry; Electrical conductivity; Spectroscopic ellipsometry; Crystallization; XRD; Infrared spectra; Titanium nitrides; Thin films; Cathode sputtering; Precipitation; Direct current; Absorption spectra; Microstructure; X-ray photoelectron spectra
• ISSN: 0921-5093; 1873-4936
• DOI: 10.1016/j.msea.2006.09.021

Titanium nitride (TiN) thin films of different thickness were deposited by direct current (dc) magnetron sputtering under conditions of various N 2 concentrations (0.5–34%). The electrical, optical, structural, compositional and morphological properties of the films were studied and the results were discussed with respect to N 2 concentration and thickness of the films. At low N 2 concentration of 0.5% (of the total sputtering pressure 1.1 Pa), golden coloured stoichiometric TiN films were obtained and with increase in the N 2 concentration non-stoichiometric TiN x phases resulted. However, irrespective of the N 2 concentration, the TiN stoichiometry in the films increased with increase in the film thickness. In the surface of the films the presence of nitride (TiN), oxynitride (TiO x N y ) and oxide (TiO 2) phases were observed and the quantity of these phases varied with the N 2 concentration and thickness. The films of lower thickness were found to be amorphous and the crystallinity was observed in the films with increase in the thickness. The crystalline films showed reflections corresponding to the (1 1 1), (2 0 0) and (2 2 0) orientation of the cubic TiN and also features associated with TiN x phases. The transmission spectra of the films revealed the typical characteristics of the TiN films i.e. a narrow transmission band, however, the width varied with thickness, in the wavelength range of 300–600 nm and exhibited low transmission in the infrared region. The TiN films deposited at low N 2 concentration of 0.5% showed smooth and uniform morphology with densely packed crystallites. With increase in N 2 concentration various characteristics such as needle type crystallization, bubble precipitates and after bubble burst morphologies were observed in the films. However, at higher N 2 concentration conditions, uniformity developed in the films with increase in thickness.