Mobility of carrier in the single-side and double-side doped square quantum wells

We present a theoretical study of the effect from doping of quantum wells (QWs) on enhancement of the mobility in one-side (1S) and two-side (2S) doped square infinite quantum well. Within the variational approach, we introduce the enhancement factor defined by the ratio of the overall mobility in t...

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Bibliographic Details
Published inThe European physical journal. B, Condensed matter physics Vol. 90; no. 6; pp. 1 - 5
Main Authors Hai, Tran Thi, Hieu, Ho Khac
Format Journal Article
LanguageEnglish
Published Berlin/Heidelberg Springer Berlin Heidelberg 01.06.2017
Springer
Springer Nature B.V
Subjects
Carrier density
Complex Systems
Condensed Matter Physics
Doping
Fluid- and Aerodynamics
Physics
Physics and Astronomy
Quantum wells
Regular Article
Solid State Physics
Transport
Wells
Solid State and Materials
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Summary:We present a theoretical study of the effect from doping of quantum wells (QWs) on enhancement of the mobility in one-side (1S) and two-side (2S) doped square infinite quantum well. Within the variational approach, we introduce the enhancement factor defined by the ratio of the overall mobility in the 2S doped square quantum wells to that in the 1S doped counterpart with the same sheet carrier density and interface profiles. The enhancement is fixed by the sample parameters such as well width and sheet carrier density. We propose two-side doping as an efficient way to upgrade the quality of QWs. Our theory is able to well reproduce the recent experimental data about low-temperature transport of electrons and holes in one-side and two-side doped square QWs.
ISSN:1434-6028
1434-6036
DOI:10.1140/epjb/e2017-80059-x