Characterisation of ultraviolet nanoimprint dedicated resists

• Published in: Microelectronic engineering Vol. 84; no. 5; pp. 967 - 972
• Main Authors: Voisin, P., Zelsmann, M., Cluzel, R., Pargon, E., Gourgon, C., Boussey, J.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2007; Elsevier Science; Elsevier
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Lithography; Microelectronic fabrication (materials and surfaces technology); Nanoimprint; Physics; Residual layer thickness; Scanning probe microscopes, components and techniques; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; UV curing resist; UV-NIL; UV-NIL; Residual layer thickness; Lithography; Nanoimprint; UV curing resist; Radiation hardening; Atomic force microscopy; Scanning electron microscopy; Critical size; Etching rate; Nanostructure; Nanolithography; Ellipsometry; Microelectronic fabrication; Ultraviolet radiation; UV lithography; Resist; Replication; Masking; Photolithography; Photoresist
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2007.01.086

We have developed a new resist material, named NILTM105, for the purpose of ultraviolet curing nanoimprint lithography. Its capability for micro- and nano-scale features patterning has been experimentally analyzed and compared to two other commercially available UV-NIL resists (AMONIL-MMS4 proposed by AMO GmbH, Germany and PAK-01 from Toyo Gosei, Japan). Using 3D-atomic force microscopy, cross section scanning electron microscopy, CD-SEM and ellipsometric measurements, the suitability of this resist for a reliable replication of the mold features was confirmed. Besides, detailed study of the residual thickness and features height variation as a function of pattern size and density has proven that the three investigated resists can flow over distances on the millimeter range. Finally, the etch resistance of the home-developed material was characterized under several plasmas conditions. It was found out that the etch rates values are compatible with the use of this resist as a masking layer during transfer steps.