CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions

Thermal stability factor Δ of the recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thicknesses, Δ is virtually independent of the junction siz...

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Bibliographic Details
Published inIEEE magnetics letters Vol. 3; p. 3000204
Main Authors Sato, H., Yamanouchi, M., Miura, K., Ikeda, S., Koizumi, R., Matsukura, F., Ohno, H.
Format Journal Article
LanguageEnglish
Published Piscataway IEEE 2012
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Anisotropy
Junctions
Magnesium oxide
magnetic random access memory
Magnetic recording
magnetic tunnel junctions (MTJs)
Magnetic tunneling
Magnetization reversal
Mathematical models
Perpendicular magnetic anisotropy
Recording
Spin electronics
Switches
Thermal stability
Tunnel junctions
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Summary:Thermal stability factor Δ of the recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknesses and junction sizes. In all series of p-MTJs with different thicknesses, Δ is virtually independent of the junction sizes of 48-81 nm in diameter. The values of Δ increase linearly as the recording layer thickness increases. The slope of the linear fit is explained well by a model based on nucleation-type magnetization reversal.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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ISSN:1949-307X
1949-3088
DOI:10.1109/LMAG.2012.2190722