Obtaining a high area ratio free-standing silicon microchannel plate via a modified electrochemical procedure

A silicon microchannel plate (Si MCP) is of large interest for electron multiplication. Conventional fabrication processes utilize an etching process on the front side and wafer thinning on the backside. In this note, a process based on electrochemical etching, developed to generate a gap between th...

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Published inJournal of micromechanics and microengineering Vol. 18; no. 3; pp. 037003 - 037003 (4)
Main Authors Chen, Xiaoming, Lin, Jilei, Yuan, Ding, Ci, Pengliang, Xin, Peisheng, Xu, Shaohui, Wang, Lianwei
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.03.2008
Institute of Physics
Subjects
Applied fluid mechanics
Applied sciences
Electronics
Exact sciences and technology
Fluid dynamics
Fluidics
Fundamental areas of phenomenology (including applications)
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Mechanical engineering. Machine design
Mechanical instruments, equipment and techniques
Microelectronic fabrication (materials and surfaces technology)
Micromechanical devices and systems
Physics
Precision engineering, watch making
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Resistors
Electrochemical properties
Suspended structure
Oxidation
Silicon
Microchannel plates
Laser fusion
Electrochemical etching
Fluidics
Production process
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Summary:A silicon microchannel plate (Si MCP) is of large interest for electron multiplication. Conventional fabrication processes utilize an etching process on the front side and wafer thinning on the backside. In this note, a process based on electrochemical etching, developed to generate a gap between the device layer and the substrate, is presented. A sample containing a microchannel through-hole structure can be directly obtained with a laser cut by scanning the laser beam on the surface without cutting through the wafer. An oxidation step is used to increase the MCP's electrical resistance. After dry oxidation at 900 deg C, structure distortion is observed in the free-standing sample. Thus, oxidizing before cutting the microchannel plate from the substrate is recommended.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0960-1317
1361-6439
DOI:10.1088/0960-1317/18/3/037003