Monte-Carlo Based On-Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch

Heavy ion cross section data taken from a hardened-by-design circuit are presented which deviate from the traditional single sensitive volume or classical rectangular parallelepiped model of single event upset. TCAD and SPICE analysis demonstrate a SEU mechanism dominated by multiple node charge col...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 54; no. 6; pp. 2419 - 2425
Main Authors Warren, K.M., Sierawski, B.D., Reed, R.A., Weller, R.A., Carmichael, C., Lesea, A., Mendenhall, M.H., Dodd, P.E., Schrimpf, R.D., Massengill, L.W., Tan Hoang, Hsing Wan, De Jong, J.L., Padovani, R., Fabula, J.J.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2007
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Application software
Computer simulation
Cross sections
Error analysis
Geant4
Latches
Mathematical models
Monte Carlo methods
MRED
Nuclear electronics
Object oriented modeling
Parallelepipeds
Predictive models
Radiation hardening
rate prediction
SEU
Single event upset
Single event upsets
Space charge
Space environment
Spacecraft
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Summary:Heavy ion cross section data taken from a hardened-by-design circuit are presented which deviate from the traditional single sensitive volume or classical rectangular parallelepiped model of single event upset. TCAD and SPICE analysis demonstrate a SEU mechanism dominated by multiple node charge collection. Monte Carlo simulation is used to model the response and predict an on-orbit error rate.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2007.907678