Interface properties and electronic structure of ultrathin manganese oxide films on Ag(0 0 1)
Ultrathin manganese monoxide films on silver single crystal substrates are studied as a function of the thickness using X-ray absorption spectroscopy (XAS) and X-ray photoemission spectroscopy (XPS). It was found that electronic and geometric properties in ultrathin films differ from the bulk. A tet...
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| Published in | Surface science Vol. 601; no. 18; pp. 4484 - 4487 |
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| Main Authors | , , , |
| Format | Journal Article Conference Proceeding |
| Language | English |
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Lausanne
Elsevier B.V
15.09.2007
Amsterdam Elsevier Science New York, NY |
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| Abstract | Ultrathin manganese monoxide films on silver single crystal substrates are studied as a function of the thickness using X-ray absorption spectroscopy (XAS) and X-ray photoemission spectroscopy (XPS). It was found that electronic and geometric properties in ultrathin films differ from the bulk. A tetragonal distortion of the oxide films is revealed by polarisation-dependent X-ray absorption measurements: the extent decreases with increasing film thickness. A structural relaxation of epitaxial oxide layers induced by heating also leads to a decrease of the tetragonal interface strain. The electronic structure of ultrathin manganese oxide films in the valence band region is very similar to that in the bulk oxide. |
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| AbstractList | Ultrathin manganese monoxide films on silver single crystal substrates are studied as a function of the thickness using X-ray absorption spectroscopy (XAS) and X-ray photoemission spectroscopy (XPS). It was found that electronic and geometric properties in ultrathin films differ from the bulk. A tetragonal distortion of the oxide films is revealed by polarisation-dependent X-ray absorption measurements: the extent decreases with increasing film thickness. A structural relaxation of epitaxial oxide layers induced by heating also leads to a decrease of the tetragonal interface strain. The electronic structure of ultrathin manganese oxide films in the valence band region is very similar to that in the bulk oxide. |
| Author | Chassé, T. Biswas, I. Nagel, M. Peisert, H. |
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| Keywords | Transition metal oxide Metal oxide interface Near edge extended X-ray absorption fine structure Ultrathin film Epitaxial growth Soft X-ray photoelectron spectroscopy Low energy electron diffraction Ultrathin films Soft X radiation Epitaxy Fine structure Interface properties Manganese oxides Electronic structure X-ray absorption spectra Transition elements LEED X-ray photoelectron spectra |
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| SubjectTerms | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science; rheology Epitaxial growth Exact sciences and technology Low energy electron diffraction Metal oxide interface Near edge extended X-ray absorption fine structure Physics Soft X-ray photoelectron spectroscopy Transition metal oxide Ultrathin film |
| Title | Interface properties and electronic structure of ultrathin manganese oxide films on Ag(0 0 1) |
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