Interface properties and electronic structure of ultrathin manganese oxide films on Ag(0 0 1)

• Published in: Surface science Vol. 601; no. 18; pp. 4484 - 4487
• Main Authors: Nagel, M., Biswas, I., Peisert, H., Chassé, T.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 15.09.2007; Amsterdam Elsevier Science; New York, NY
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Epitaxial growth; Exact sciences and technology; Low energy electron diffraction; Metal oxide interface; Near edge extended X-ray absorption fine structure; Physics; Soft X-ray photoelectron spectroscopy; Transition metal oxide; Ultrathin film; Transition metal oxide; Metal oxide interface; Near edge extended X-ray absorption fine structure; Ultrathin film; Epitaxial growth; Soft X-ray photoelectron spectroscopy; Low energy electron diffraction; Ultrathin films; Soft X radiation; Epitaxy; Fine structure; Interface properties; Manganese oxides; Electronic structure; X-ray absorption spectra; Transition elements; LEED; X-ray photoelectron spectra
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/j.susc.2007.04.137

Ultrathin manganese monoxide films on silver single crystal substrates are studied as a function of the thickness using X-ray absorption spectroscopy (XAS) and X-ray photoemission spectroscopy (XPS). It was found that electronic and geometric properties in ultrathin films differ from the bulk. A tetragonal distortion of the oxide films is revealed by polarisation-dependent X-ray absorption measurements: the extent decreases with increasing film thickness. A structural relaxation of epitaxial oxide layers induced by heating also leads to a decrease of the tetragonal interface strain. The electronic structure of ultrathin manganese oxide films in the valence band region is very similar to that in the bulk oxide.