Reliability Performance of a 70-GHz Mixer in 65-nm Technology

• Published in: IEEE transactions on device and materials reliability Vol. 16; no. 1; pp. 101 - 104
• Main Authors: Yen, H.-D, Yuan, J.-S, Huang, G.-W, Yeh, W.-K, Huang, F.-S
• Format: Magazine Article
• Language: English
• Published: New York IEEE 01.03.2016; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: CMOS; Compressing; Conversion; Devices; Double balanced mixer; Gain; gate oxide breakdown; Gilbert cell; hot electron; Intermediate frequency; Logic gates; millimeter-wave; Mixers; Radio frequency; reliability; Stress; Stresses; Transconductance; Transistors; hot electron; Gilbert cell; millimeter wave; Double-balanced mixer; reliability; gate oxide breakdown
• ISSN: 1530-4388; 1558-2574
• DOI: 10.1109/TDMR.2016.2523881

A downconversion mixer using the double-balanced Gilbert cell structure is fabricated using 65-nm CMOS technology. The mixer maximum conversion gain is -0.93 dB, IF output power at the 1-dB compression point is -4 dBm, and IIP3 is 6.12 dBm with IF at 1 GHz. In addition, mixer reliability subjected to dynamic stress at elevated VDD is examined experimentally. Transistor measurement was investigated to provide physical insight into the stress effect on device and circuit degradation.