Microstructural development and microwave properties of ZnO-doped tin titanate zirconate

This work consisted of the preparation of pure and ZnO-doped tin titanate zirconate (ZTS) by oxide mixture. Samples were sintered at temperatures ranging from 1200 to 1450°C. An analysis was made of the influence of sintering on the microstructural development and dielectric properties of these mate...

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Published inMaterials science & engineering. A, Structural materials : properties, microstructure and processing Vol. 398; no. 1-2; pp. 220 - 226
Main Authors Arantes, Vera Lúcia, de Souza, Dulcina P.F.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 25.05.2005
Elsevier
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Abstract This work consisted of the preparation of pure and ZnO-doped tin titanate zirconate (ZTS) by oxide mixture. Samples were sintered at temperatures ranging from 1200 to 1450°C. An analysis was made of the influence of sintering on the microstructural development and dielectric properties of these materials at high frequencies. The liquid phase composition present during sintering was shown to be dependent on the ZnO percentage. This percentage determines grain composition and, hence, dielectric performance at high frequencies. A maximum loaded quality factor, Ql, of 1645 was found for 1.0wt% ZnO-doped ZTS sintered at 1400°C.
AbstractList This work consisted of the preparation of pure and ZnO-doped tin titanate zirconate (ZTS) by oxide mixture. Samples were sintered at temperatures ranging from 1200 to 1450 deg C. An analysis was made of the influence of sintering on the microstructural development and dielectric properties of these materials at high frequencies. The liquid phase composition present during sintering was shown to be dependent on the ZnO percentage. This percentage determines grain composition and, hence, dielectric performance at high frequencies. A maximum loaded quality factor, Q1, of 1645 was found for 1.0 wt% ZnO-doped ZTS sintered at 1400 deg C.
This work consisted of the preparation of pure and ZnO-doped tin titanate zirconate (ZTS) by oxide mixture. Samples were sintered at temperatures ranging from 1200 to 1450°C. An analysis was made of the influence of sintering on the microstructural development and dielectric properties of these materials at high frequencies. The liquid phase composition present during sintering was shown to be dependent on the ZnO percentage. This percentage determines grain composition and, hence, dielectric performance at high frequencies. A maximum loaded quality factor, Ql, of 1645 was found for 1.0wt% ZnO-doped ZTS sintered at 1400°C.
Author de Souza, Dulcina P.F.
Arantes, Vera Lúcia
Author_xml – sequence: 1
  givenname: Vera Lúcia
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  fullname: Arantes, Vera Lúcia
  organization: University of Vale do Paraíba, Institute of Research and Development, Av. Shishima Hifumi, 2911-12244-000 São José dos Campos, SP, Brazil
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  givenname: Dulcina P.F.
  surname: de Souza
  fullname: de Souza, Dulcina P.F.
  email: dulcina@power.ufscar.br
  organization: Department of Materials Engineering, Federal University of São Carlos, P.O. Box 676, 13565-905 São Carlos, SP, Brazil
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Cites_doi 10.1016/0025-5408(81)90066-0
10.1007/BF00576276
10.1111/j.1151-2916.1995.tb08248.x
10.1016/0025-5408(88)90176-6
10.1111/j.1151-2916.1994.tb04629.x
10.1109/TMTT.1960.1124749
10.1007/BF00687279
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10.1111/j.1151-2916.1983.tb09997.x
10.1111/j.1151-2916.1994.tb09741.x
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10.1111/j.1151-2916.1991.tb04105.x
10.1007/BF00639311
10.1016/S0955-2219(98)00381-1
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Issue 1-2
Keywords Tin titanate zirconate
Microwave properties
Liquid phase sintering
High performance
Phase composition
Quality factor
Microwave radiation
Dielectric properties
Doping
Zirconates
Titanates
High frequency
Language English
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SubjectTerms Condensed matter: electronic structure, electrical, magnetic, and optical properties
Dielectric properties of solids and liquids
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Exact sciences and technology
Liquid phase sintering
Microwave properties
Physics
Tin titanate zirconate
Title Microstructural development and microwave properties of ZnO-doped tin titanate zirconate
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