Microstructural development and microwave properties of ZnO-doped tin titanate zirconate

• Published in: Materials science & engineering. A, Structural materials : properties, microstructure and processing Vol. 398; no. 1-2; pp. 220 - 226
• Main Authors: Arantes, Vera Lúcia, de Souza, Dulcina P.F.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 25.05.2005; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Dielectric properties of solids and liquids; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Exact sciences and technology; Liquid phase sintering; Microwave properties; Physics; Tin titanate zirconate; Tin titanate zirconate; Microwave properties; Liquid phase sintering; High performance; Phase composition; Quality factor; Microwave radiation; Dielectric properties; Doping; Zirconates; Titanates; High frequency
• ISSN: 0921-5093; 1873-4936
• DOI: 10.1016/j.msea.2005.03.011

This work consisted of the preparation of pure and ZnO-doped tin titanate zirconate (ZTS) by oxide mixture. Samples were sintered at temperatures ranging from 1200 to 1450°C. An analysis was made of the influence of sintering on the microstructural development and dielectric properties of these materials at high frequencies. The liquid phase composition present during sintering was shown to be dependent on the ZnO percentage. This percentage determines grain composition and, hence, dielectric performance at high frequencies. A maximum loaded quality factor, Ql, of 1645 was found for 1.0wt% ZnO-doped ZTS sintered at 1400°C.