Suspended-Gate- and Lundstrom-FET integrated on a CMOS-chip

A Lundstrom-FET and a SGFET with Pt suspended gate have been integrated together on a single chip in CMOS technology, and operated as a hydrogen sensor. Sensor sensitivities have been determined and the reactions to target gases have been measured. While the Lundstrom-FET is more sensitive at low H...

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Bibliographic Details
Published inSensors and actuators. A. Physical. Vol. 123; pp. 2 - 6
Main Authors Wilbertz, Ch, Frerichs, H.-P., Freund, I., Lehmann, M.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 23.09.2005
Subjects
Actuators
CMOS
CMOS gas sensor
Devices
Electronics
Expansion
Gates
Lundstrom-FET
Security
Sensors
SGFET
CMOS gas sensor
SGFET
Lundstrom-FET
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Summary:A Lundstrom-FET and a SGFET with Pt suspended gate have been integrated together on a single chip in CMOS technology, and operated as a hydrogen sensor. Sensor sensitivities have been determined and the reactions to target gases have been measured. While the Lundstrom-FET is more sensitive at low H 2 concentrations, the SGFET's measuring range extends to higher concentrations. So the paired setup enlarges the sensitivity range of the sensor. At the same time the signal reliability, e.g. in security applications, is increased due to different cross sensitivities of the two devices. A modified CMOS process is used which allows the integration of operation and evaluation electronics.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0924-4247
1873-3069
DOI:10.1016/j.sna.2005.03.042