Control of composition and structure of ferroelectric oxide thin films grown by pulsed laser deposition

• Published in: Physica status solidi. C Vol. 5; no. 10; pp. 3293 - 3297
• Main Authors: Guilloux-Viry, Maryline, Peng, Wei, Députier, Stéphanie, Bouquet, Valérie, Perrin, André
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.08.2008; WILEY‐VCH Verlag
• Subjects: 61.05.cp; 68.37.Hk; 68.55.−a; 77.84.Dy; 81.15.Fg; 85.40.−e
• ISSN: 1862-6351; 1610-1634; 1610-1642
• DOI: 10.1002/pssc.200879512

SrBi2Nb2O9 and KTa1–xNbxO3 high quality thin films were grown by pulsed laser deposition. An accurate optimization of deposition conditions is a prerequisite for the control of composition, mainly according to the high volatility of Bi and K. In order to take benefit of the ferroelectric characteristics for new microelectronic devices, thin films were epitaxially grown on various substrates and seed layers adapted to application requirements. For that purpose metal electrodes and ferroelectric oxides were associated in a planar capacitor geometry or in a coplanar configuration depending on the targeted applications. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)