High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs

We report on AlN/GaN high electron mobility transistors grown on silicon substrate with highly optimized electron confinement under a high electric field. The fabricated short devices (sub-10-nm barrier thickness with a gate length of 120 nm) using gate-to-drain distances below 2 µm deliver a unique...

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Bibliographic Details
Published inElectronics (Basel) Vol. 5; no. 4; p. 12
Main Authors Medjdoub, Farid, Kabouche, Riad, Dogmus, Ezgi, Linge, Astrid, Zegaoui, Malek
Format Journal Article
LanguageEnglish
Published MDPI 18.03.2016
Subjects
Engineering Sciences
Micro and nanotechnologies
Microelectronics
GaN-on-Si
low leakage current
high breakdown voltage
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Summary:We report on AlN/GaN high electron mobility transistors grown on silicon substrate with highly optimized electron confinement under a high electric field. The fabricated short devices (sub-10-nm barrier thickness with a gate length of 120 nm) using gate-to-drain distances below 2 µm deliver a unique breakdown field close to 100 V/µm while offering high frequency performance. The low leakage current well below 1 µA/mm is achieved without using any gate dielectrics which typically degrade both the frequency performance and the device reliability. This achievement is mainly attributed to the optimization of material design and processing quality and paves the way for millimeter-wave devices operating at drain biases above 40 V, which would be only limited by the thermal dissipation
ISSN:2079-9292
2079-9292
DOI:10.3390/electronics5010012