The physical process analysis of the capacitance-voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors

This paper deduces the expression of the Schottky contact capacitance of AlGaN/A1N/GaN high electron mobility transistors （HEMTs）, which will help to understand the electron depleting process. Some material parameters related with capacitance-voltage profiling are given in the expression. Detailed a...

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Bibliographic Details
Published inChinese physics B Vol. 19; no. 9; pp. 536 - 542
Main Author 王鑫华 赵妙 刘新宇 蒲颜 郑英奎 魏珂
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.09.2010
Subjects
Aluminum gallium nitrides
Aluminum nitride
Capacitance
Contact
Gallium nitrides
HEMT器件
High electron mobility transistors
Profiling
Semiconductor devices
正向偏置
氮化铝
氮化镓
物理过程分析
电压特性
高电子迁移率晶体管
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/19/9/097302

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Summary:This paper deduces the expression of the Schottky contact capacitance of AlGaN/A1N/GaN high electron mobility transistors （HEMTs）, which will help to understand the electron depleting process. Some material parameters related with capacitance-voltage profiling are given in the expression. Detailed analysis of the forward-biased capacitance has been carried on. The gate capacitance of undoped AlGaN/AlN/GaN HEMT will fall under forward bias. If a rising profile is obviously observed, the donor-like impurity or trap is possibly introduced in the barrier.
Bibliography:AlGaN/AlN/GaN, HEMT, capacitance-voltage characteristics, trap
11-5639/O4
TN32
TN304.23
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/19/9/097302