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Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs

This paper presents an accurate analytical model of the random telegraph signal （RTS） noise time-constant ratio （-T/-Te） for RTS noise in nano-MOSFETs, in which the Coulomb-blockade effect on trapping and detrapping processes was taken into account. Based on this new model, the depth of the trap res...

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Bibliographic Details
Published in	Chinese physics B Vol. 19; no. 3; pp. 467 - 470
Main Author	马中发张鹏吴勇李伟华庄奕琪杜磊
Format	Journal Article
Language	English
Published	IOP Publishing 01.03.2010
Subjects	Extraction Mathematical analysis Mathematical models MOSFET Nanocomposites Nanomaterials Nanostructure Noise Trapping 纳米晶体管转运站陷阱深度随机电报信号
Online Access	Get full text
ISSN	1674-1056 2058-3834
DOI	10.1088/1674-1056/19/3/037201

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Summary:	This paper presents an accurate analytical model of the random telegraph signal （RTS） noise time-constant ratio （-T/-Te） for RTS noise in nano-MOSFETs, in which the Coulomb-blockade effect on trapping and detrapping processes was taken into account. Based on this new model, the depth of the trap responsible for RTS noise in a sample n-type nano-MOSFET is extracted. The results show that large errors will be introduced to the calculated trap depth when the Coulomb-blockade effect is neglected.
Bibliography:	TN386.1 trap, RTS noise, nano-MOSFETs 11-5639/O4 TN32 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	1674-1056 2058-3834
DOI:	10.1088/1674-1056/19/3/037201