A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs

On the basis of the exact resultant solution of two dimensional Poisson’s equations,a new accurate two-dimensional analytical model comprising surface channel potentials,a surface channel electric field and a threshold voltage for fully depleted asymmetrical dual material gate double-gate strained-S...

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Bibliographic Details
Published inJournal of semiconductors Vol. 32; no. 4; pp. 70 - 76
Main Author 李劲 刘红侠 袁博 曹磊 李斌
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.04.2011
Subjects
Asymmetry
Channels
Depletion
Gates
Mathematical models
MOSFET
MOSFETs
Semiconductors
Two dimensional
二维分析
全耗尽
双栅
应变硅
料门
解析模型
非对称
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Summary:On the basis of the exact resultant solution of two dimensional Poisson’s equations,a new accurate two-dimensional analytical model comprising surface channel potentials,a surface channel electric field and a threshold voltage for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs is successfully developed. The model shows its validity by good agreement with the simulated results from a two-dimensional numerical simulator.Besides offering a physical insight into device physics,the model provides basic design guidance for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs.
Bibliography:TN322.8
TN386.1
dual material gate； double-gate MOSFET； strained-Si； short-channel effect； the drain-induced barrier-lowering
11-5781/TN
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/32/4/044005