Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy

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Bibliographic Details
Published inSemiconductor science and technology Vol. 17; no. 9; pp. 957 - 960
Main Authors Lu, Liwu, Yan, Hua, Yang, C L, Xie, Maohai, Wang, Zhanguo, Wang, J, Ge, Weikun
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.09.2002
Institute of Physics
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Iii-v semiconductors
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Photoluminescence
Physics
Raman spectra
Inorganic compounds
Semiconductor materials
Gallium nitrides
Luminescence
Photoluminescence
Binary compounds
Spectral line shift
Thin films
Energy gap
Mismatch lattice
Thermal expansion coefficient
Molecular beam epitaxy
Arrhenius equation
Stress effects
Donor center
Bound exciton
Activation energy
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/17/9/310