Quantum dot-based non-volatile memory: a comprehensive outlook

• Published in: RSC advances Vol. 15; no. 18; pp. 14428 - 14462
• Main Authors: Taher, Abu, Rahman, M. Atikur, Mia, Rana, Uddin, Nasir, Islam, Mustavi, Khan, M. N. I, Alam, M. Khurshed, Alim, Mohammad A
• Format: Journal Article
• Language: English
• Published: England Royal Society of Chemistry 28.04.2025; The Royal Society of Chemistry
• Subjects: Chemistry; Memory devices; Optical properties; Performance enhancement; Prototyping; Quantum dots
• ISSN: 2046-2069; 2046-2069
• DOI: 10.1039/d4ra08307e

With the rise of digital technology, the use of memory devices is swiftly expanding, and this trend is expected to continue in the forthcoming years. Accordingly, researchers are exploring materials that surpass the performance of those used in traditional memory devices, and notably, there is a considerable interest in quantum dots (QDs). This is primarily due to the fact that quantum dots possess exceptional optical and electric properties. As a result, they have become appealing materials to enhance the performance of non-volatile memory devices. In this review, we outlined the various approaches employed for the synthesis of quantum dots as well as different types of quantum dots used for prototyping different non-volatile memory technologies and their current perspective. Additionally, we compared various key parameters, such as the ON/OFF ratio, retention time, memory window, charge trapping capacity, and multiple voltage levels, of these QD-based memories together with future outlook. With the rise of digital technology, the use of memory devices is swiftly expanding, and quantum dots based material will be used to improve efficiency in the forthcoming along with subject of extensive research topic.