Temperature induced complementary switching in titanium oxide resistive random access memory

• Published in: AIP advances Vol. 6; no. 7
• Main Authors: Panda, D., Simanjuntak, F. M., Tseng, T.-Y.
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 01.07.2016
• Subjects: ANNEALING; AUGER ELECTRON SPECTROSCOPY; COMPLIANCE; Computer memory; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DENSITY; ELECTRODES; Energy management; Information technology; LAYERS; MEMORY DEVICES; NANOSTRUCTURES; Nanotechnology devices; Power consumption; Power management; Random access memory; RANDOMNESS; REDUCTION; RELIABILITY; SWITCHES; Switching; TITANIUM; TITANIUM NITRIDES; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY
• ISSN: 2158-3226; 2158-3226
• DOI: 10.1063/1.4959799

On the way towards high memory density and computer performance, a considerable development in energy efficiency represents the foremost aspiration in future information technology. Complementary resistive switch consists of two antiserial resistive switching memory (RRAM) elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. Here we present a titanium oxide based complementary RRAM (CRRAM) device with Pt top and TiN bottom electrode. A subsequent post metal annealing at 400°C induces CRRAM. Forming voltage of 4.3 V is required for this device to initiate switching process. The same device also exhibiting bipolar switching at lower compliance current, Ic <50 μA. The CRRAM device have high reliabilities. Formation of intermediate titanium oxi-nitride layer is confirmed from the cross-sectional HRTEM analysis. The origin of complementary switching mechanism have been discussed with AES, HRTEM analysis and schematic diagram. This paper provides valuable data along with analysis on the origin of CRRAM for the application in nanoscale devices.